Технічний опис NGTB10N60FG ON Semiconductor
Description: IGBT 600V 20A TO-220F-3FS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A, Supplier Device Package: TO-220F-3FS, Td (on/off) @ 25°C: 40ns/145ns, Test Condition: 300V, 10A, 30Ohm, 15V, Gate Charge: 55 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 72 A, Power - Max: 40 W.
Інші пропозиції NGTB10N60FG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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NGTB10N60FG | onsemi |
 Description: IGBT 600V 20A TO-220F-3FSPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A Supplier Device Package: TO-220F-3FS Td (on/off) @ 25°C: 40ns/145ns Test Condition: 300V, 10A, 30Ohm, 15V Gate Charge: 55 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. |
| NGTB10N60FG | onsemi |
IGBT Transistors IGBT N-Channel, 600V, 10A, VCE(sat)=1.5V, TO-220F-3FS |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
NGTB10N60FG | ONSEMI |
Description: ONSEMI - NGTB10N60FG - IGBT, 20 A, 1.5 V, 40 W, 600 V, SC-67, 3 Pin(s) Kollektor-Emitter-Spannung, max.: 600 Verlustleistung: 40 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 20 Bauform - Transistor: SC-67 Kollektor-Emitter-Sättigungsspannung: 1.5 Betriebstemperatur, max.: 150 Produktpalette: - SVHC: No SVHC (15-Jan-2018) |
товару немає в наявності |
В кошику од. на суму грн. |
| NGTB10N60FG |
|
Виробник: onsemi
Description: IGBT 600V 20A TO-220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: TO-220F-3FS
Td (on/off) @ 25°C: 40ns/145ns
Test Condition: 300V, 10A, 30Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 40 W
Description: IGBT 600V 20A TO-220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: TO-220F-3FS
Td (on/off) @ 25°C: 40ns/145ns
Test Condition: 300V, 10A, 30Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 40 W
товару немає в наявності
В кошику
од. на суму грн.
| NGTB10N60FG |
|
Виробник: onsemi
IGBT Transistors IGBT N-Channel, 600V, 10A, VCE(sat)=1.5V, TO-220F-3FS
IGBT Transistors IGBT N-Channel, 600V, 10A, VCE(sat)=1.5V, TO-220F-3FS
товару немає в наявності
В кошику
од. на суму грн.
| NGTB10N60FG |
|
Виробник: ONSEMI
Description: ONSEMI - NGTB10N60FG - IGBT, 20 A, 1.5 V, 40 W, 600 V, SC-67, 3 Pin(s)
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 40
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 20
Bauform - Transistor: SC-67
Kollektor-Emitter-Sättigungsspannung: 1.5
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (15-Jan-2018)
Description: ONSEMI - NGTB10N60FG - IGBT, 20 A, 1.5 V, 40 W, 600 V, SC-67, 3 Pin(s)
Kollektor-Emitter-Spannung, max.: 600
Verlustleistung: 40
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 20
Bauform - Transistor: SC-67
Kollektor-Emitter-Sättigungsspannung: 1.5
Betriebstemperatur, max.: 150
Produktpalette: -
SVHC: No SVHC (15-Jan-2018)
товару немає в наявності
В кошику
од. на суму грн.