Технічний опис NGTB20N120IHLWG ON Semiconductor
Description: IGBT 1200V 40A 192W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: -/235ns, Switching Energy: 700µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 200 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 192 W.
Інші пропозиції NGTB20N120IHLWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NGTB20N120IHLWG | Виробник : onsemi |
 Description: IGBT 1200V 40A 192W TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: -/235ns Switching Energy: 700µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 192 W |
товару немає в наявності |
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NGTB20N120IHLWG | Виробник : onsemi |
IGBT Transistors IGBT 1200V 20A FS1 Induction Heating |
товару немає в наявності |