NGTB20N120IHLWG

NGTB20N120IHLWG ON Semiconductor


ngtb20n120ihl-d.pdf Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 40A 192000mW 3-Pin(3+Tab) TO-247 Tube
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Технічний опис NGTB20N120IHLWG ON Semiconductor

Description: IGBT 1200V 40A 192W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: -/235ns, Switching Energy: 700µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 200 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 192 W.

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NGTB20N120IHLWG NGTB20N120IHLWG Виробник : onsemi ngtb20n120ihl-d.pdf Description: IGBT 1200V 40A 192W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: -/235ns
Switching Energy: 700µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
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NGTB20N120IHLWG NGTB20N120IHLWG Виробник : onsemi NGTB20N120IHL_D-2317707.pdf IGBT Transistors IGBT 1200V 20A FS1 Induction Heating
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