Технічний опис NGTB20N60L2TF1G ON Semiconductor
Description: IGBT 600V 40A TO-3PF-3, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A, Supplier Device Package: TO-3PF-3, Td (on/off) @ 25°C: 60ns/193ns, Test Condition: 300V, 20A, 30Ohm, 15V, Gate Charge: 84 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 64 W.
Інші пропозиції NGTB20N60L2TF1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NGTB20N60L2TF1G | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 40A 64000mW 3-Pin(3+Tab) TO-3PF Tube |
товару немає в наявності |
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| NGTB20N60L2TF1G | Виробник : onsemi |
Description: IGBT 600V 40A TO-3PF-3 Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A Supplier Device Package: TO-3PF-3 Td (on/off) @ 25°C: 60ns/193ns Test Condition: 300V, 20A, 30Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 64 W |
товару немає в наявності |