Технічний опис NGTB25N120FLWG ON Semiconductor
Description: IGBT TRENCH FS 1200V 50A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 240 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 91ns/228ns, Switching Energy: 1.5mJ (on), 950µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 220 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 192 W.
Інші пропозиції NGTB25N120FLWG
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NGTB25N120FLWG | Виробник : onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 240 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 91ns/228ns Switching Energy: 1.5mJ (on), 950µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 220 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 192 W |
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