Технічний опис NGTB30N120IHLWG ON Semiconductor
Description: IGBT 1200V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/360ns, Switching Energy: 1mJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 420 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 320 A, Power - Max: 260 W.
Інші пропозиції NGTB30N120IHLWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NGTB30N120IHLWG | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube |
товару немає в наявності |
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NGTB30N120IHLWG | Виробник : onsemi |
Description: IGBT 1200V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/360ns Switching Energy: 1mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 420 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 320 A Power - Max: 260 W |
товару немає в наявності |
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NGTB30N120IHLWG | Виробник : ON Semiconductor |
IGBT Transistors IGBT 1200V 30A FS1 Induction Heating |
товару немає в наявності |