Технічний опис NGTB30N120IHRWG ON Semiconductor
Description: IGBT 1200V 60A 384W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/230ns, Switching Energy: 700µJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 225 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 384 W.
Інші пропозиції NGTB30N120IHRWG
Фото | Назва | Виробник | Інформація |
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NGTB30N120IHRWG | Виробник : onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/230ns Switching Energy: 700µJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 225 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 384 W |
товару немає в наявності |
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NGTB30N120IHRWG | Виробник : onsemi |
![]() |
товару немає в наявності |