NGTB30N60IHLWG onsemi
Виробник: onsemi
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 280µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 280µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
на замовлення 5760 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
129+ | 155.26 грн |
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Технічний опис NGTB30N60IHLWG onsemi
Description: IGBT 600V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 400 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 70ns/140ns, Switching Energy: 280µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 130 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 250 W.
Інші пропозиції NGTB30N60IHLWG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
NGTB30N60IHLWG | Виробник : ON Semiconductor | IGBT Transistors 600V/30A IGBT FS1 IH TO-2 |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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NGTB30N60IHLWG | Виробник : ON Semiconductor | Trans IGBT Chip N-CH 600V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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NGTB30N60IHLWG | Виробник : onsemi |
Description: IGBT 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 400 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 280µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 130 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W |
товар відсутній |