NGTB40N120FLWG

NGTB40N120FLWG ON Semiconductor


ngtb40n120flw-d.pdf Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 80A 260000mW 3-Pin(3+Tab) TO-247 Tube
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Технічний опис NGTB40N120FLWG ON Semiconductor

Description: IGBT 1200V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 130ns/385ns, Switching Energy: 2.6mJ (on), 1.6mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 415 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 260 W.

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NGTB40N120FLWG NGTB40N120FLWG Виробник : onsemi NGTB40N120FLWG.pdf Description: IGBT 1200V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 130ns/385ns
Switching Energy: 2.6mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 415 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 260 W
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NGTB40N120FLWG NGTB40N120FLWG Виробник : onsemi NGTB40N120FLW_D-2317711.pdf IGBT Transistors IGBT, 1200 V, 40 A, FS1 Solar/UPS
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