Технічний опис NHP620MFDT3G ON Semiconductor
Description: DIODE ARRAY GP 200V 3A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 3A, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V, Qualification: AEC-Q101.
Інші пропозиції NHP620MFDT3G
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NHP620MFDT3G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
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