NHPM120T3G onsemi
Виробник: onsemi
Description: DIODE GEN PURP 200V 1A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A POWERMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
на замовлення 10945 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
11+ | 26.59 грн |
14+ | 20.69 грн |
25+ | 18.93 грн |
100+ | 11.98 грн |
250+ | 9.91 грн |
500+ | 9.09 грн |
1000+ | 6.7 грн |
2500+ | 6.3 грн |
5000+ | 5.89 грн |
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Технічний опис NHPM120T3G onsemi
Description: DIODE GEN PURP 200V 1A POWERMITE, Packaging: Tape & Reel (TR), Package / Case: DO-216AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: Powermite, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V.
Інші пропозиції NHPM120T3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
NHPM120T3G | Виробник : ON Semiconductor | Rectifiers PUF1A 200V IN PWRMIT |
на замовлення 3980 шт: термін постачання 21-30 дні (днів) |
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NHPM120T3G | Виробник : onsemi |
Description: DIODE GEN PURP 200V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
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