NJVMJD243T4G onsemi
Виробник: onsemi
Description: TRANS NPN 100V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 21.91 грн |
| 5000+ | 19.48 грн |
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Технічний опис NJVMJD243T4G onsemi
Description: TRANS NPN 100V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V, Frequency - Transition: 40MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.4 W.
Інші пропозиції NJVMJD243T4G за ціною від 23.60 грн до 89.65 грн
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NJVMJD243T4G | onsemi |
Description: TRANS NPN 100V 4A DPAK Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Power - Max: 1.4 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: DPAK Frequency - Transition: 40MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) |
на замовлення 196406 шт: термін постачання 21-31 дні (днів) |
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NJVMJD243T4G | onsemi |
Bipolar Transistors - BJT BIP NPN 4A 100V TR |
на замовлення 9425 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| NJVMJD243T4G |
|
Виробник: onsemi
Description: TRANS NPN 100V 4A DPAK
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Description: TRANS NPN 100V 4A DPAK
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
на замовлення 196406 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.65 грн |
| 10+ | 54.19 грн |
| 100+ | 35.67 грн |
| 500+ | 26.00 грн |
| 1000+ | 23.60 грн |
| NJVMJD243T4G |
|
Виробник: onsemi
Bipolar Transistors - BJT BIP NPN 4A 100V TR
Bipolar Transistors - BJT BIP NPN 4A 100V TR
на замовлення 9425 шт:
термін постачання 21-30 дні (днів)