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NJVMJD42CT4G ON Semiconductor

Name: NJVMJD42CT4G
Brand: onsemi
SKU: 4868905-4
Price: 363.52 UAH
Availability: BackOrder

Виробник: ON Semiconductor

на замовлення 5000 шт:

термін постачання 14-28 дні (днів)

В кошику од. на суму грн.

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Технічний опис NJVMJD42CT4G ON Semiconductor

Description: TRANS PNP 100V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V, Frequency - Transition: 3MHz, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.75 W, Qualification: AEC-Q101.

Інші пропозиції NJVMJD42CT4G

Назва	Виробник	Інформація	Доступність	Ціна
NJVMJD42CT4G	Виробник : onsemi	Description: TRANS PNP 100V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
NJVMJD42CT4G	Виробник : onsemi	Description: TRANS PNP 100V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
NJVMJD42CT4G	Виробник : onsemi	Bipolar Transistors - BJT SILICON Pwr TRANSISTOR	товару немає в наявності	В кошику од. на суму грн.
NJVMJD42CT4G	Виробник : ONSEMI	Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 6A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 20W Case: DPAK Current gain: 15...75 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry	товару немає в наявності	В кошику од. на суму грн.