NMSD200B01-7
Виробник:
на замовлення 10440 шт:
термін постачання 14-28 дні (днів)
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Технічний опис NMSD200B01-7
Description: MOSFET N-CH 60V 200MA SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: SOT-363, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Інші пропозиції NMSD200B01-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
NMSD200B01-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 200MA SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-363 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NMSD200B01-7 | Diodes Incorporated |
MOSFETs ARRAY N-MOSFET AND SCHTKY DIO SOT-363 |
товару немає в наявності |
В кошику од. на суму грн. |
| NMSD200B01-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-363
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 200MA SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-363
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NMSD200B01-7 |
|
Виробник: Diodes Incorporated
MOSFETs ARRAY N-MOSFET AND SCHTKY DIO SOT-363
MOSFETs ARRAY N-MOSFET AND SCHTKY DIO SOT-363
товару немає в наявності
В кошику
од. на суму грн.