NP100P04PDG-E1-AY Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: MOSFET P-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 1+ | 385.64 грн |
| 10+ | 312.10 грн |
| 100+ | 252.50 грн |
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Технічний опис NP100P04PDG-E1-AY Renesas Electronics America Inc
Description: MOSFET P-CH 40V 100A TO263, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.8W (Ta), 200W (Tc).
Інші пропозиції NP100P04PDG-E1-AY
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NP100P04PDG-E1-AY | Виробник : Renesas |
TO263/SWITCHING P-CHANNEL POWER MOSFET POWERMOSFET кількість в упаковці: 800 шт |
товару немає в наявності |
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NP100P04PDG-E1-AY | Виробник : Renesas Electronics America Inc |
Description: MOSFET P-CH 40V 100A TO263 Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.8W (Ta), 200W (Tc) |
товару немає в наявності |
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NP100P04PDG-E1-AY | Виробник : Renesas Electronics |
MOSFET LOW VOLTAGE POWER MOSFET |
товару немає в наявності |