NP100P04PLG-E1-AY Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 800+ | 229.84 грн |
| 1600+ | 189.51 грн |
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Технічний опис NP100P04PLG-E1-AY Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263, Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.8W (Ta), 200W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції NP100P04PLG-E1-AY за ціною від 248.99 грн до 380.55 грн
| Фото | Назва | Виробник | Інформація |
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NP100P04PLG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 100A TO263Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Drain to Source Voltage (Vdss): 40 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
|
| NP100P04PLG-E1-AY |
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Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET P-CH 40V 100A TO263
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 380.55 грн |
| 10+ | 307.79 грн |
| 100+ | 248.99 грн |


