Технічний опис NP22N055SLE-E1-AY Renesas
Description: MOSFET N-CH 55V 22A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 11A, 10V, Power Dissipation (Max): 1.2W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (MP-3ZK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Інші пропозиції NP22N055SLE-E1-AY
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NP22N055SLE-E1-AY | Виробник : Renesas |
 MP-3ZK/TO-252ZKNCH, SINGLE, |
товару немає в наявності |
||
 |
NP22N055SLE-E1-AY | Виробник : Renesas Electronics Corporation |
Description: MOSFET N-CH 55V 22A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 11A, 10V Power Dissipation (Max): 1.2W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
товару немає в наявності |
|
| NP22N055SLE-E1-AY | Виробник : Renesas Electronics |
MOSFET Single MOSFET, matte tin |
товару немає в наявності |