NP30N04QUK-E1-AY Renesas Electronics
| Кількість | Ціна |
|---|---|
| 2+ | 247.03 грн |
| 10+ | 159.12 грн |
| 100+ | 96.44 грн |
| 500+ | 78.97 грн |
Відгуки про товар
Написати відгук
Технічний опис NP30N04QUK-E1-AY Renesas Electronics
Description: MOSFET 2N-CH 40V 30A 8HSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), Power - Max: 1W (Ta), 59W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V, Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-HSON (5x5.4), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції NP30N04QUK-E1-AY за ціною від 78.31 грн до 251.58 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NP30N04QUK-E1-AY | Виробник : Renesas Electronics Corporation |
Description: MOSFET 2N-CH 40V 30A 8HSONPackaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta), 59W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON (5x5.4) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 4970 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
NP30N04QUK-E1-AY | Виробник : Renesas Electronics Corporation |
Description: MOSFET 2N-CH 40V 30A 8HSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1W (Ta), 59W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON (5x5.4) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |

