NP32N055SHE-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 55V 32A TO252, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Part Status: Obsolete, Supplier Device Package: TO-252 (MP-3ZK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.2W (Ta), 66W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.