NP45N06VDK-E1-AY Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO252
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252 (MP-3ZP)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
| Кількість | Ціна |
|---|---|
| 2500+ | 37.49 грн |
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Технічний опис NP45N06VDK-E1-AY Renesas Electronics Corporation
Description: MOSFET N-CH 60V 45A TO252, Qualification: AEC-Q101, Grade: Automotive, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252 (MP-3ZP), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 11.6mOhm @ 23A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C.
Інші пропозиції NP45N06VDK-E1-AY за ціною від 37.62 грн до 141.09 грн
| Фото | Назва | Виробник | Інформація |
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NP45N06VDK-E1-AY | Виробник : Renesas Electronics |
MOSFETs POWER DEVICE E AUTO MOS MP-25LZP ANL2 |
на замовлення 4892 шт: термін постачання 21-30 дні (днів) |
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NP45N06VDK-E1-AY | Виробник : Renesas Electronics Corporation |
Description: MOSFET N-CH 60V 45A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 (MP-3ZP) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.2W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 7340 шт: термін постачання 21-31 дні (днів) |
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