NP50P03YDG-E1-AY Renesas Electronics
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 212.25 грн |
| 10+ | 154.53 грн |
| 100+ | 94.36 грн |
| 500+ | 78.51 грн |
| 1000+ | 75.41 грн |
| 2500+ | 67.26 грн |
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Технічний опис NP50P03YDG-E1-AY Renesas Electronics
Description: MOSFET P-CH 30V 50A 8HSON, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V, Power Dissipation (Max): 1W (Ta), 102W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-HSON, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції NP50P03YDG-E1-AY за ціною від 73.32 грн до 214.76 грн
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NP50P03YDG-E1-AY | Виробник : Renesas Electronics Corporation |
 Description: MOSFET P-CH 30V 50A 8HSONPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Power Dissipation (Max): 1W (Ta), 102W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4970 шт: термін постачання 21-31 дні (днів) |
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NP50P03YDG-E1-AY | Виробник : Renesas Electronics Corporation |
Description: MOSFET P-CH 30V 50A 8HSON Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Power Dissipation (Max): 1W (Ta), 102W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |