NP75N04YUK-E1-AY Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HSON (5x5.4)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 2500+ | 70.72 грн |
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Технічний опис NP75N04YUK-E1-AY Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON, Rds On (Max) @ Id, Vgs: 3.3mOhm @ 38A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-HSON (5x5.4), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1W (Ta), 138W (Tc), Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V.
Інші пропозиції NP75N04YUK-E1-AY за ціною від 60.55 грн до 188.90 грн
| Фото | Назва | Виробник | Інформація |
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NP75N04YUK-E1-AY | Виробник : Renesas Electronics |
MOSFETs Nch Power MOSFET 40V 75A 3.3mohm SON-8 5x6 |
на замовлення 2412 шт: термін постачання 21-30 дні (днів) |
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NP75N04YUK-E1-AY | Виробник : Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 75A 8HSON Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HSON (5x5.4) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Ta), 138W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 38A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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