NP80N04NDG-S18-AY Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 80A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис NP80N04NDG-S18-AY Renesas Electronics Corporation
Description: MOSFET N-CH 40V 80A TO262, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Grade: Automotive, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.8W (Ta), 115W (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Інші пропозиції NP80N04NDG-S18-AY за ціною від 145.95 грн до 145.95 грн
| Фото | Назва | Виробник | Інформація |
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NP80N04NDG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 40V 80A TO262 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Grade: Automotive Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
|
| NP80N04NDG-S18-AY |
|
Виробник: NEC Corporation
Description: MOSFET N-CH 40V 80A TO262
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Grade: Automotive
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 40V 80A TO262
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Grade: Automotive
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 151+ | 145.95 грн |