NP88N04NUG-S18-AY Renesas

Description: NP88N04NUG-S18-AY - MOS FIELD EF, Power Dissipation (Max): 1.8W (Ta), 200W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 44A, 10V, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 4V @ 250µA.