Продукція > RENESAS ELECTRONICS AMERICA INC > NP89N06PDK-E1-AY
NP89N06PDK-E1-AY

NP89N06PDK-E1-AY Renesas Electronics America Inc

np89n06pdk60-v-90-n-channel-power-mos-fet-application-automotive?r=500 Виробник: Renesas Electronics America Inc
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tray
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
на замовлення 346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+158.78 грн
10+137.38 грн
25+129.63 грн
80+103.65 грн
230+97.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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Технічний опис NP89N06PDK-E1-AY Renesas Electronics America Inc

Description: P-TRS2 AUTOMOTIVE MOS, Packaging: Tray, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 45A, 10V, Power Dissipation (Max): 1.8W (Ta), 147W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.