NP90N03VHG-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 30V 90A TO252, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.2W (Ta), 105W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 45A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).