
NRVHP620MFDT3G onsemi

Description: DIODE ARRAY GP 200V 3A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
3+ | 139.27 грн |
10+ | 85.60 грн |
100+ | 57.64 грн |
500+ | 42.87 грн |
1000+ | 39.25 грн |
2000+ | 36.21 грн |
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Технічний опис NRVHP620MFDT3G onsemi
Description: DIODE ARRAY GP 200V 3A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 3A, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V, Qualification: AEC-Q101.
Інші пропозиції NRVHP620MFDT3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
NRVHP620MFDT3G | Виробник : ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A Mounting: SMD Case: DFN8 Semiconductor structure: double independent Reverse recovery time: 25ns Max. forward impulse current: 80A Application: automotive industry Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 6A Max. forward voltage: 1.09V Load current: 3A кількість в упаковці: 1 шт |
товару немає в наявності |
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NRVHP620MFDT3G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
|
![]() |
NRVHP620MFDT3G | Виробник : onsemi |
![]() |
товару немає в наявності |
|
NRVHP620MFDT3G | Виробник : ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A Mounting: SMD Case: DFN8 Semiconductor structure: double independent Reverse recovery time: 25ns Max. forward impulse current: 80A Application: automotive industry Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 6A Max. forward voltage: 1.09V Load current: 3A |
товару немає в наявності |