
на замовлення 9838 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
11+ | 32.62 грн |
13+ | 26.92 грн |
100+ | 16.22 грн |
500+ | 12.70 грн |
1000+ | 11.96 грн |
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Технічний опис NRVHPM120T3G onsemi
Description: DIODE GEN PURP 200V 1A POWERMITE, Packaging: Tape & Reel (TR), Package / Case: DO-216AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: Powermite, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V, Qualification: AEC-Q101.
Інші пропозиції NRVHPM120T3G за ціною від 12.01 грн до 36.52 грн
Фото | Назва | Виробник | Інформація |
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NRVHPM120T3G | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9984 шт: термін постачання 21-31 дні (днів) |
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NRVHPM120T3G | Виробник : ON Semiconductor |
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товару немає в наявності |
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NRVHPM120T3G | Виробник : ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V Max. off-state voltage: 200V Max. load current: 2A Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 30A Application: automotive industry Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Case: POWERMITE кількість в упаковці: 1 шт |
товару немає в наявності |
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NRVHPM120T3G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
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NRVHPM120T3G | Виробник : ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V Max. off-state voltage: 200V Max. load current: 2A Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 30A Application: automotive industry Kind of package: reel; tape Type of diode: rectifying Mounting: SMD Case: POWERMITE |
товару немає в наявності |