на замовлення 12665 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.64 грн |
| 12+ | 27.72 грн |
| 100+ | 19.09 грн |
| 500+ | 15.69 грн |
| 1000+ | 12.62 грн |
| 2500+ | 10.88 грн |
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Технічний опис NRVHPM120T3G onsemi
Description: DIODE GEN PURP 200V 1A POWERMITE, Packaging: Tape & Reel (TR), Package / Case: DO-216AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: Powermite, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V.
Інші пропозиції NRVHPM120T3G за ціною від 12.02 грн до 41.16 грн
| Фото | Назва | Виробник | Інформація |
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NRVHPM120T3G | Виробник : onsemi |
 Description: DIODE GEN PURP 200V 1A POWERMITEPackaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
на замовлення 10374 шт: термін постачання 21-31 дні (днів) |
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| NRVHPM120T3G | Виробник : ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V Mounting: SMD Application: automotive industry Case: POWERMITE Max. load current: 2A Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 200V кількість в упаковці: 1 шт |
товар відсутній |
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NRVHPM120T3G | Виробник : onsemi |
Description: DIODE GEN PURP 200V 1A POWERMITE Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
товар відсутній |
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| NRVHPM120T3G | Виробник : ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 50ns; POWERMITE; Ufmax: 1.1V Mounting: SMD Application: automotive industry Case: POWERMITE Max. load current: 2A Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Max. off-state voltage: 200V |
товар відсутній |