Технічний опис NRVTS10100PFST3G ON Semiconductor
Description: DIODE SCHOTTKY 100V 10A TO2773, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 760pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-277-3, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 100 V, Qualification: AEC-Q101.
Інші пропозиції NRVTS10100PFST3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NRVTS10100PFST3G | Виробник : ONSEMI |
![]() Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape Max. off-state voltage: 100V Max. load current: 20A Max. forward voltage: 0.78V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 120A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: TO277 кількість в упаковці: 1 шт |
товару немає в наявності |
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NRVTS10100PFST3G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 760pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
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NRVTS10100PFST3G | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 760pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
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NRVTS10100PFST3G | Виробник : onsemi |
![]() |
товару немає в наявності |
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NRVTS10100PFST3G | Виробник : ONSEMI |
![]() Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape Max. off-state voltage: 100V Max. load current: 20A Max. forward voltage: 0.78V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 120A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: TO277 |
товару немає в наявності |