NSB8BTHE3_B/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис NSB8BTHE3_B/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 8A TO263AB, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-263AB (D²PAK), Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції NSB8BTHE3_B/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NSB8BTHE3_B/I | Виробник : Vishay General Semiconductor |
Rectifiers 100V 125A AEC-Q101 |
товару немає в наявності |