NSB8JTHE3_B/P Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 600V 8A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.