Технічний опис NSB8JTHM3/I Vishay
Description: DIODE GEN PURP 600V 8A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Qualification: AEC-Q101.
Інші пропозиції NSB8JTHM3/I
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NSB8JTHM3/I | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
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NSB8JTHM3/I | Виробник : Vishay | Rectifiers 8A,600V,GPP,PLASTIC RECT,TO263 |
товару немає в наявності |