NSB8MTHE3_B/I Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 1KV 8A TO263AB, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).