Технічний опис NSBA113EDXV6T1G ON Semiconductor
Description: TRANS 2PNP PREBIAS 0.25W SOT563, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Resistor - Base (R1): 1kOhms, Resistor - Emitter Base (R2): 1kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363.
Інші пропозиції NSBA113EDXV6T1G
| Фото | Назва | Виробник | Інформація |
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NSBA113EDXV6T1G | Виробник : onsemi |
 Description: TRANS 2PNP PREBIAS 0.25W SOT563Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhms Resistor - Emitter Base (R2): 1kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
товару немає в наявності |
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NSBA113EDXV6T1G | Виробник : onsemi |
Digital Transistors 50V Dual PNP Bipolar Digital Transistor |
товару немає в наявності |
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| NSBA113EDXV6T1G | Виробник : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 1kΩ Mounting: SMD Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.5W Current gain: 3...5 Collector-emitter voltage: 50V Quantity in set/package: 4000pcs. Base resistor: 1kΩ Base-emitter resistor: 1kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SOT563 |
товару немає в наявності |