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NSBC123EPDXV6T1G onsemi

dtc113ep-d.pdf
Виробник: onsemi
Digital Transistors SSP SOT563 DUAL 2.2/2.2K
на замовлення 3835 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
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Технічний опис NSBC123EPDXV6T1G onsemi

Description: TRANS PREBIAS NPN/PNP 50V SOT563, Supplier Device Package: SOT-563, Resistor - Emitter Base (R2): 2.2kOhms, Resistor - Base (R1): 2.2kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).

Інші пропозиції NSBC123EPDXV6T1G

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
NSBC123EPDXV6T1G NSBC123EPDXV6T1G onsemi dtc113ep-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC123EPDXV6T1G NSBC123EPDXV6T1G onsemi dtc113ep-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
товару немає в наявності
В кошику  од. на суму  грн.
NSBC123EPDXV6T1G dtc113ep-d.pdf
NSBC123EPDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC123EPDXV6T1G dtc113ep-d.pdf
NSBC123EPDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
товару немає в наявності
В кошику  од. на суму  грн.