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NSBC123EPDXV6T1G onsemi

dtc113ep-d.pdf
Виробник: onsemi
Digital Transistors SSP SOT563 DUAL 2.2/2.2K
на замовлення 3835 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна
12+29.68 грн
13+25.61 грн
2000+21.85 грн
4000+4.44 грн
Мінімальне замовлення: 12 шт
В кошику  од. на суму  грн.
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Технічний опис NSBC123EPDXV6T1G onsemi

Description: TRANS PREBIAS NPN/PNP 50V SOT563, Supplier Device Package: SOT-563, Resistor - Emitter Base (R2): 2.2kOhms, Resistor - Base (R1): 2.2kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).

Інші пропозиції NSBC123EPDXV6T1G

Фото Назва Виробник Інформація Доступність Ціна
NSBC123EPDXV6T1G NSBC123EPDXV6T1G onsemi dtc113ep-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC123EPDXV6T1G NSBC123EPDXV6T1G onsemi dtc113ep-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
товару немає в наявності
В кошику  од. на суму  грн.
NSBC123EPDXV6T1G ONSEMI dtc113ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
NSBC123EPDXV6T1G dtc113ep-d.pdf
NSBC123EPDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSBC123EPDXV6T1G dtc113ep-d.pdf
NSBC123EPDXV6T1G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 2.2kOhms
Resistor - Base (R1): 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
товару немає в наявності
В кошику  од. на суму  грн.
NSBC123EPDXV6T1G dtc113ep-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 4000pcs.
товару немає в наявності
В кошику  од. на суму  грн.