| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 972.92 грн |
| 10+ | 682.75 грн |
| 100+ | 488.07 грн |
| 500+ | 458.39 грн |
| 800+ | 436.99 грн |
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Технічний опис NSF030120T2A0J Nexperia
Description: NSF030120T2A0/SOT8107/X.PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tj), Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V, Power Dissipation (Max): 294W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 2mA, Supplier Device Package: X.PAK, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V.
Інші пропозиції NSF030120T2A0J за ціною від 526.31 грн до 950.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| NSF030120T2A0J | Nexperia USA Inc. |
 Description: NSF030120T2A0/SOT8107/X.PAKPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 2mA Supplier Device Package: X.PAK Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V |
на замовлення 708 шт: термін постачання 21-31 дні (днів) |
|
| NSF030120T2A0J |
|
Виробник: Nexperia USA Inc.
Description: NSF030120T2A0/SOT8107/X.PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: X.PAK
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Description: NSF030120T2A0/SOT8107/X.PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: X.PAK
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
на замовлення 708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 950.60 грн |
| 10+ | 640.18 грн |
| 100+ | 526.31 грн |