| Кількість | Ціна |
|---|---|
| 1+ | 975.14 грн |
| 10+ | 864.85 грн |
| 510+ | 508.34 грн |
| 1020+ | 480.41 грн |
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Технічний опис NSF040120L4A0Q Nexperia
Description: SICFET N-CH 1200V 65A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 4mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V.
Інші пропозиції NSF040120L4A0Q за ціною від 1016.16 грн до 1465.07 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|
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NSF040120L4A0Q | Nexperia USA Inc. |
 Description: SICFET N-CH 1200V 65A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 4mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V |
на замовлення 417 шт: термін постачання 21-31 дні (днів) |
|
| NSF040120L4A0Q |
|
Виробник: Nexperia USA Inc.
Description: SICFET N-CH 1200V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Description: SICFET N-CH 1200V 65A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1465.07 грн |
| 10+ | 1016.16 грн |