NSS20500UW3TBG onsemi
Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис NSS20500UW3TBG onsemi
Description: TRANS PNP 20V 5A 3WDFN, Power - Max: 875 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: 3-WDFN (2x2), Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції NSS20500UW3TBG за ціною від 11.28 грн до 60.11 грн
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NSS20500UW3TBG | onsemi |
Description: TRANS PNP 20V 5A 3WDFN Power - Max: 875 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: 3-WDFN (2x2) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NSS20500UW3TBG | onsemi |
Bipolar Transistors - BJT 20V PNP LOW VCE(SAT) XTR |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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| NSS20500UW3TBG |
|
Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 57.88 грн |
| 10+ | 34.74 грн |
| 100+ | 22.51 грн |
| 500+ | 16.17 грн |
| 1000+ | 14.57 грн |
| NSS20500UW3TBG |
|
Виробник: onsemi
Bipolar Transistors - BJT 20V PNP LOW VCE(SAT) XTR
Bipolar Transistors - BJT 20V PNP LOW VCE(SAT) XTR
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.11 грн |
| 10+ | 36.72 грн |
| 100+ | 20.72 грн |
| 500+ | 15.86 грн |
| 1000+ | 14.31 грн |
| 3000+ | 12.26 грн |
| 6000+ | 11.28 грн |