NSS60101DMTTBG onsemi
Виробник: onsemi
Description: TRANS 2NPN 60V 1A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Відгуки про товар
Написати відгук
Технічний опис NSS60101DMTTBG onsemi
Description: TRANS 2NPN 60V 1A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2.27W, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: 6-WDFN (2x2), Part Status: Active.
Інші пропозиції NSS60101DMTTBG за ціною від 15.38 грн до 86.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSS60101DMTTBG | onsemi |
Description: TRANS 2NPN 60V 1A 6WDFNOperating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 6-WDFN (2x2) Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 1A Power - Max: 2.27W |
на замовлення 3765 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
NSS60101DMTTBG | onsemi |
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
|
| NSS60101DMTTBG |
![]() |
Виробник: onsemi
Description: TRANS 2NPN 60V 1A 6WDFN
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 2.27W
Description: TRANS 2NPN 60V 1A 6WDFN
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 2.27W
на замовлення 3765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 51.26 грн |
| 10+ | 33.21 грн |
| 100+ | 22.74 грн |
| 500+ | 16.86 грн |
| 1000+ | 15.38 грн |
| NSS60101DMTTBG |
![]() |
Виробник: onsemi
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 86.98 грн |
| 10+ | 61.13 грн |
| 100+ | 33.07 грн |
| 500+ | 22.78 грн |
| 1000+ | 19.19 грн |
| 3000+ | 17.19 грн |


