NSS60200SMTTBG onsemi
Виробник: onsemi
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
| Кількість | Ціна |
|---|---|
| 3000+ | 13.22 грн |
| 6000+ | 11.80 грн |
| 9000+ | 11.32 грн |
| 15000+ | 10.30 грн |
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Технічний опис NSS60200SMTTBG onsemi
Description: TRANS PNP 60V 2A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V, Frequency - Transition: 155MHz, Supplier Device Package: 6-WDFN (2x2), Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.8 W.
Інші пропозиції NSS60200SMTTBG за ціною від 11.28 грн до 60.85 грн
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NSS60200SMTTBG | onsemi |
Description: TRANS PNP 60V 2A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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NSS60200SMTTBG | onsemi |
Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT) |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| NSS60200SMTTBG |
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Виробник: onsemi
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
Description: TRANS PNP 60V 2A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 45.99 грн |
| 11+ | 29.78 грн |
| 100+ | 20.32 грн |
| 500+ | 15.01 грн |
| 1000+ | 13.67 грн |
| NSS60200SMTTBG |
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Виробник: onsemi
Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT)
Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT)
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.85 грн |
| 10+ | 37.12 грн |
| 100+ | 20.93 грн |
| 500+ | 16.00 грн |
| 1000+ | 14.45 грн |
| 3000+ | 12.33 грн |
| 6000+ | 11.28 грн |