NST1602CLTWG onsemi
Виробник: onsemiDescription: 160V 1.5A NPN LOW SATURATION BJT
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 8-LFPAK
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 800 mW
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Технічний опис NST1602CLTWG onsemi
Description: 160V 1.5A NPN LOW SATURATION BJT, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: 8-LFPAK, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 800 mW.
Інші пропозиції NST1602CLTWG
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NST1602CLTWG | Виробник : onsemi |
Description: 160V 1.5A NPN LOW SATURATION BJT Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 100MHz Supplier Device Package: 8-LFPAK Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 800 mW |
товару немає в наявності |
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| NST1602CLTWG | Виробник : onsemi |
Buffers & Line Drivers 160V 15A NPN LOW SATURATION BJT |
товару немає в наявності |