NSV30100LT1G onsemi
Виробник: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис NSV30100LT1G onsemi
Description: TRANS PNP 30V 1A SOT23-3, Qualification: AEC-Q101, Power - Max: 710 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 1 A, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції NSV30100LT1G за ціною від 8.72 грн до 52.22 грн
| Фото | Назва | Виробник | Інформація |
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NSV30100LT1G | onsemi |
Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, 30 V, 1.0 A |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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NSV30100LT1G | onsemi |
Description: TRANS PNP 30V 1A SOT23-3 Qualification: AEC-Q101 Power - Max: 710 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| NSV30100LT1G |
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Виробник: onsemi
Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, 30 V, 1.0 A
Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, 30 V, 1.0 A
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 32.74 грн |
| 12+ | 27.82 грн |
| 100+ | 18.07 грн |
| 500+ | 14.14 грн |
| 1000+ | 11.32 грн |
| 3000+ | 9.56 грн |
| 9000+ | 8.72 грн |
| NSV30100LT1G |
|
Виробник: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 30V 1A SOT23-3
Qualification: AEC-Q101
Power - Max: 710 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 52.22 грн |