NSV60101DMTWTBG onsemi
Виробник: onsemi
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
Відгуки про товар
Написати відгук
Технічний опис NSV60101DMTWTBG onsemi
Description: TRANS NPN DUAL 60V 1A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2.27W, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: 6-WDFN (2x2).
Інші пропозиції NSV60101DMTWTBG за ціною від 14.46 грн до 77.39 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NSV60101DMTWTBG | onsemi |
Description: TRANS NPN DUAL 60V 1A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: 6-WDFN (2x2) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
NSV60101DMTWTBG | onsemi |
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA |
на замовлення 164 шт: термін постачання 21-30 дні (днів) |
|
| NSV60101DMTWTBG |
|
Виробник: onsemi
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
Description: TRANS NPN DUAL 60V 1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 180mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: 6-WDFN (2x2)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.39 грн |
| 10+ | 36.19 грн |
| 100+ | 25.05 грн |
| 500+ | 19.64 грн |
| 1000+ | 16.72 грн |
| NSV60101DMTWTBG |
|
Виробник: onsemi
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
на замовлення 164 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 77.39 грн |
| 10+ | 46.97 грн |
| 100+ | 26.86 грн |
| 500+ | 19.70 грн |
| 1000+ | 17.84 грн |
| 3000+ | 14.46 грн |