NSVBA114EDXV6T1G onsemi
Виробник: onsemiDescription: TRANS PREBIAS 2PNP 50V SOT563-6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
на замовлення 136000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4873+ | 4.52 грн |
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Технічний опис NSVBA114EDXV6T1G onsemi
Description: TRANS PREBIAS 2PNP 50V SOT563-6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-563.
Інші пропозиції NSVBA114EDXV6T1G за ціною від 3.92 грн до 35.57 грн
| Фото | Назва | Виробник | Інформація |
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NSVBA114EDXV6T1G | Виробник : onsemi |
Digital Transistors SS SOT563 RSTR XSTR |
на замовлення 3779 шт: термін постачання 21-30 дні (днів) |
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NSVBA114EDXV6T1G | Виробник : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R |
товару немає в наявності |
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NSVBA114EDXV6T1G | Виробник : onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT563-6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
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NSVBA114EDXV6T1G | Виробник : onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT563-6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
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| NSVBA114EDXV6T1G | Виробник : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Application: automotive industry Quantity in set/package: 4000pcs. |
товару немає в наявності |