| Кількість | Ціна |
|---|---|
| 10+ | 32.86 грн |
| 12+ | 27.42 грн |
| 500+ | 20.85 грн |
| 1000+ | 18.27 грн |
| 2000+ | 9.20 грн |
| 4000+ | 5.16 грн |
| 8000+ | 3.83 грн |
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Технічний опис NSVBC123JPDXV6T1G onsemi
Category: Complementary transistors, Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V, Type of transistor: NPN / PNP, Polarisation: bipolar, Collector-emitter voltage: 50V, Collector current: 0.1A, Power dissipation: 0.5W, Case: SOT563, Current gain: 80...140, Mounting: SMD, Kind of package: reel; tape, Application: automotive industry, Base-emitter resistor: 47kΩ, Kind of transistor: BRT; complementary pair, Base resistor: 2.2kΩ, Quantity in set/package: 4000pcs..
Інші пропозиції NSVBC123JPDXV6T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| NSVBC123JPDXV6T1G | Виробник : ON Semiconductor |
 Bipolar Transistors - Pre-Biased SS SOT563 SRF MT RST XSTR |
товару немає в наявності |
||
| NSVBC123JPDXV6T1G | Виробник : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 2.2kΩ Quantity in set/package: 4000pcs. |
товару немає в наявності |