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NSVBC123JPDXV6T1G ON Semiconductor


DTC123JP_D-1387747.pdf
Виробник: ON Semiconductor
Bipolar Transistors - Pre-Biased SS SOT563 SRF MT RST XSTR
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Технічний опис NSVBC123JPDXV6T1G ON Semiconductor

Category: Complementary transistors, Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V, Type of transistor: NPN / PNP, Polarisation: bipolar, Collector-emitter voltage: 50V, Collector current: 0.1A, Power dissipation: 0.5W, Case: SOT563, Current gain: 80...140, Mounting: SMD, Kind of package: reel; tape, Application: automotive industry, Base-emitter resistor: 47kΩ, Kind of transistor: BRT; complementary pair, Base resistor: 2.2kΩ, Quantity in set/package: 4000pcs..

Інші пропозиції NSVBC123JPDXV6T1G

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
NSVBC123JPDXV6T1G ONSEMI Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Quantity in set/package: 4000pcs.
товару немає в наявності
В кошику  од. на суму  грн.
NSVBC123JPDXV6T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Quantity in set/package: 4000pcs.
товару немає в наявності
В кошику  од. на суму  грн.