NSVDTC113EM3T5G ON Semiconductor
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)
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Технічний опис NSVDTC113EM3T5G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SOT723, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Supplier Device Package: SOT-723, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 260 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Інші пропозиції NSVDTC113EM3T5G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NSVDTC113EM3T5G | Виробник : onsemi |
 Description: TRANS PREBIAS NPN 50V SOT723Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SOT-723 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
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NSVDTC113EM3T5G | Виробник : onsemi |
Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SOT-723 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
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| NSVDTC113EM3T5G | Виробник : onsemi |
Digital Transistors NPN DIGITAL TRANSIST |
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| NSVDTC113EM3T5G | Виробник : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 3...5 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 1kΩ Application: automotive industry Base-emitter resistor: 1kΩ |
товару немає в наявності |