NSVMMBT5087LT3G

NSVMMBT5087LT3G ON Semiconductor


mmbt5087lt1-d.pdf Виробник: ON Semiconductor
Trans GP BJT PNP 50V 0.05A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R
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Технічний опис NSVMMBT5087LT3G ON Semiconductor

Description: TRANS PNP 50V 0.05A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V, Frequency - Transition: 40MHz, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 225 mW, Qualification: AEC-Q101.

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NSVMMBT5087LT3G NSVMMBT5087LT3G Виробник : onsemi mmbt5087lt1-d.pdf Description: TRANS PNP 50V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 225 mW
Qualification: AEC-Q101
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NSVMMBT5087LT3G NSVMMBT5087LT3G Виробник : onsemi MMBT5087LT1_D-2316018.pdf Bipolar Transistors - BJT SS SOT23 LN XSTR PNP 50V
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