NSVMMBT6520LT1G onsemi
Виробник: onsemi
Description: TRANS PNP 350V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 225 mW
Qualification: AEC-Q101
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Технічний опис NSVMMBT6520LT1G onsemi
Description: TRANS PNP 350V 0.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 225 mW, Qualification: AEC-Q101.
Інші пропозиції NSVMMBT6520LT1G за ціною від 11.61 грн до 47.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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NSVMMBT6520LT1G | onsemi |
Description: TRANS PNP 350V 0.5A SOT23-3 Qualification: AEC-Q101 Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 6379 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT6520LT1G | onsemi |
Bipolar Transistors - BJT High Voltage PNP Bipolar Transistor |
на замовлення 2662 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| NSVMMBT6520LT1G |
|
Виробник: onsemi
Description: TRANS PNP 350V 0.5A SOT23-3
Qualification: AEC-Q101
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 350V 0.5A SOT23-3
Qualification: AEC-Q101
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 6379 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.16 грн |
| 11+ | 28.14 грн |
| 100+ | 18.12 грн |
| 500+ | 12.93 грн |
| 1000+ | 11.61 грн |
| NSVMMBT6520LT1G |
|
Виробник: onsemi
Bipolar Transistors - BJT High Voltage PNP Bipolar Transistor
Bipolar Transistors - BJT High Voltage PNP Bipolar Transistor
на замовлення 2662 шт:
термін постачання 21-30 дні (днів)