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NSVMMUN2112LT1G ON Semiconductor

Name: NSVMMUN2112LT1G
Brand: onsemi
SKU: 5181476-4
Price: 362.60 UAH
Availability: BackOrder

Виробник: ON Semiconductor
Trans Digital BJT PNP 50V 0.1A 400mW 3-Pin SOT-23 T/R Automotive AEC-Q101

товару немає в наявності

В кошику од. на суму грн.

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Технічний опис NSVMMUN2112LT1G ON Semiconductor

Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, Grade: Automotive, Qualification: AEC-Q101, Resistors Included: R1 and R2.

Інші пропозиції NSVMMUN2112LT1G

Назва	Виробник	Інформація	Доступність	Ціна
NSVMMUN2112LT1G	Виробник : onsemi	Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2	товару немає в наявності	В кошику од. на суму грн.
NSVMMUN2112LT1G	Виробник : onsemi	Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2	товару немає в наявності	В кошику од. на суму грн.
NSVMMUN2112LT1G	Виробник : onsemi	Digital Transistors PNP Bipolar Digital Transistor (BRT)	товару немає в наявності	В кошику од. на суму грн.
NSVMMUN2112LT1G	Виробник : ONSEMI	Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Current gain: 60...100 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ	товару немає в наявності	В кошику од. на суму грн.