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NSVMMUN2232LT3G

NSVMMUN2232LT3G onsemi

dtc143e-d.pdf
Виробник: onsemi
Digital Transistors SS SOT23 BR XSTR NPN 50V
на замовлення 18502 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна
26+12.75 грн
44+7.38 грн
100+4.09 грн
500+2.96 грн
1000+2.61 грн
2500+2.54 грн
5000+2.18 грн
Мінімальне замовлення: 26 шт
В кошику  од. на суму  грн.
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Технічний опис NSVMMUN2232LT3G onsemi

Description: TRANS PREBIAS NPN 50V SOT23-3, Resistors Included: R1 and R2, Qualification: AEC-Q101, Grade: Automotive, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Power - Max: 246 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3 (TO-236), DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Інші пропозиції NSVMMUN2232LT3G

Фото Назва Виробник Інформація Доступність Ціна
NSVMMUN2232LT3G NSVMMUN2232LT3G onsemi dtc143e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
NSVMMUN2232LT3G NSVMMUN2232LT3G onsemi dtc143e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
NSVMMUN2232LT3G dtc143e-d.pdf
NSVMMUN2232LT3G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
NSVMMUN2232LT3G dtc143e-d.pdf
NSVMMUN2232LT3G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.