NSVMMUN2235LT1G onsemi
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
| Кількість | Ціна |
|---|---|
| 27+ | 11.77 грн |
| 46+ | 6.65 грн |
| 100+ | 4.12 грн |
| 500+ | 2.81 грн |
| 1000+ | 2.46 грн |
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Технічний опис NSVMMUN2235LT1G onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Grade: Automotive, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Інші пропозиції NSVMMUN2235LT1G
| Фото | Назва | Виробник | Інформація |
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NSVMMUN2235LT1G | Виробник : onsemi |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
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NSVMMUN2235LT1G | Виробник : onsemi |
Digital Transistors NPN DIGITAL TRANSIST |
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| NSVMMUN2235LT1G | Виробник : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ Current gain: 80...140 Quantity in set/package: 3000pcs. |
товару немає в наявності |